Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction

J. Ibáñez; R. Kudrawiec; J. Misiewicz; M. Schmidbauer; M. Henini; M. Hopkinson. (2006). Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction. , (), –. doi:10.1063/1.2374669

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